BF1201WR,115 datasheet

Маркировка

BF1201WR,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BF1201WR,115 Configuration: Single Dual Gate Continuous Drain Current: 0.03 A Current - Test: 15mA Current Rating: 30mA Drain-source Breakdown Voltage: 10 V Frequency: 400MHz Gain: 29dB Gate-source Breakdown Voltage: 6 V ID_COMPONENTS: 1949186 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Noise Figure: 1dB Package / Case: CMPAK-4 Power - Output: - Power Dissipation: 200 mW Series: - Transistor Polarity: N-Channel Transistor Type: N-Channel Dual Gate Voltage - Test: 5V Product Category: Transistors RF MOSFET Small Signal RoHS: yes Drain-Source Breakdown Voltage: 10 V Gate-Source Breakdown Voltage: 6 V Factory Pack Quantity: 3000 Part # Aliases: BF1201WR T/R Other Names: 934055961115::BF1201WR T/R::BF1201WR T/R
Количество страниц

15 шт.
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155,62 KB